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Beilstein J. Nanotechnol. 2020, 11, 1623–1630, doi:10.3762/bjnano.11.145
Figure 1: (a) Structure diagram of p-Si/n-ZnO NWs PDs. (b) Cross-sectional SEM image of the as-grown Si/ZnO N...
Figure 2: Working mechanism of PENGs. under zero bias, a depletion zone and corresponding built-in electric f...
Figure 3: Impact of the incident optical power density and periodic frequency on the short-circuit current. I...
Figure 4: Dynamic response characteristics I–t characteristics of PDs under zero bias and different incident ...
Figure 5: (a) Structure diagram of an ultra-thin (45 μm) p-Si/n-ZnO heterojunction device. (b) Optical image ...